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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage CHA IN Emitter-base voltage Base current (DC) Junction temperature Storage temperature Collector-emitter voltage GE S N Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 50 50 4 3 8 0.5 UNIT V V V A A A W ae ae Open collector Collector current (DC) Collector current-peak Collector power dissipation TC=25ae 25 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA ;IB=0 IC=5mA ;IE=0 IE=5mA ;IC=0 IC=2A; IB=0.2A IC=1A ; VCE=4V VCB=25V;IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=4V IC=1A ; VCE=4V IC=0.5A ; VCE=4V 35 35 MIN 50 50 4 2SC1061 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA hFE-2 classifications A 35-70 B Transition frequency 60-120 IN ANG CH C 100-200 D 160-320 EMIC ES DUC ON 5.0 TOR 320 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1061 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 4 |
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